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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information TRIACS Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and commutating di/dt are required. * Blocking Voltage to 800 Volts * On-State Current Rating of 12 Amperes RMS at 70C * Uniform Gate Trigger currents in Three Modes * High Immunity to dv/dt -- 250 V/s minimum at 125C * High Commutating di/dt -- 6.5 A/ms minimum at 125C * Industry Standard TO-220 AB Package * High Surge Current Capability -- 120 Amperes *Motorola preferred devices MAC12 SERIES * TRIACS 12 AMPERES RMS 400 thru 800 VOLTS MT2 MT1 MT2 G CASE 221A-06 (TO-220AB) Style 4 MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Parameter Peak Repetitive Off-State Voltage (1) (TJ = -40 to 125C, Sine Wave, 50 to 60 Hz, Gate Open) MAC12D MAC12M MAC12N IT(RMS) ITSM I2t PGM PG(AV) TJ Tstg Symbol VDRM 400 600 800 12 100 41 16 0.35 - 40 to +125 - 40 to +150 A A A2sec Watts Watts C C Value Unit Volts On-State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 70C) Peak Non-repetitive Surge Current (One Full Cycle, 60 Hz, TJ = 125C) Circuit Fusing Consideration (t = 8.3 ms) Peak Gate Power (Pulse Width 1.0 s, TC = 80C) Average Gate Power (t = 8.3 ms, TC = 80C) Operating Junction Temperature Range Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance -- Junction to Case Thermal Resistance -- Junction to Ambient Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds RJC RJA TL 2.2 62.5 260 C/W C ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Blocking Current (VD = Rated VDRM, Gate Open) TJ = 25C TJ =1 25C IDRM -- -- -- -- 0.01 2.0 mA (1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. This document contains information on a new product. Specifications and information herein are subject to change without notice. Preferred devices are Motorola recommended choices for future use and best overall value. REV 1 Motorola Thyristor Device Data 3-53 MAC12 SERIES ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS Peak On-State Voltage* (ITM = 17 A) Continuous Gate Trigger Current (VD = 12 V, RL = 100 ) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) Hold Current (VD = 12 V, Gate Open, Initiating Current = 150 mA) Latch Current (VD = 24 V, IG = 35 mA) MT2(+), G(+); MT2(-), G(-) MT2(+), G(-) Gate Trigger Voltage (VD = 12 V, RL = 100 ) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) VTM IGT 5.0 5.0 5.0 IH IL -- -- VGT 0.5 0.5 0.5 0.69 0.77 0.72 1.5 1.5 1.5 20 30 50 80 Volts -- 13 16 18 20 35 35 35 40 mA mA -- -- 1.85 Volts mA DYNAMIC CHARACTERISTICS Rate of Change of Commutating Current* (VD = 400 V, ITM =4.4A, Commutating dv/dt = 18 V/s, Gate Open, TJ = 125C, f = 250 Hz, No Snubber) Critical Rate of Rise of Off-State Voltage (VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125C) *Indicates Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%. (dv/dt)c 6.5 -- -- A/ms dv/dt 250 -- -- V/s 3-54 Motorola Thyristor Device Data |
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